Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.

Renesas' radiation hardened portfolio includes GaN FETs for satellites and other harsh environment applications. GaN FETs provide better conductivity and switching characteristics that enable several system benefits, including a reduction in system size, weight and power loss.

文档和下载

文档标题 其他语言 类型 文档格式 文件大小 日期
应用指南 &白皮书
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 白皮书 PDF 470 KB
R34AN0001EU: GaN FET Current Increase Due to Heavy Ion Testing 应用文档 PDF 178 KB
Advantages of Using Gallium NitrideFETs in Satellite Applications 白皮书 PDF 548 KB
AN9867: End of Life Derating: A Necessity or Overkill 应用文档 PDF 338 KB
其他
Intersil Space Products Brochure 手册 PDF 3.14 MB
Intersil Commercial Lab Services 手册 PDF 364 KB

新闻及更多资源

类型 日期 升序排列
Low Dose Rate Acceptance Testing 基本页面 2020年3月25日
Radiation Tolerant Plastic-Package ICs 基本页面 2020年3月20日
Standard Data Package 基本页面 2020年3月19日
Rad Hard SMD Test Flow 基本页面 2020年3月19日
Rad Hard Test Reports 基本页面 2020年3月19日