This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特性

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Power supply voltage applies 12 V and 24 V.
  • For Industrial applications

产品选择

器件号 Part Status Buy Sample
RJF0604DPD
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文档

文档标题 language 类型 文档格式 文件大小 日期
数据手册与勘误表
RJF0604DPD Data Sheet (60V, 5A Silicon N Channel Thermal FET / Power Switching) 日本語 数据手册 PDF 101 KB
应用指南 & 白皮书
Attention of Handling Semiconductor Devices 日本語 应用文档 PDF 648 KB
功率MOS FET 应用说明 应用文档 PDF 2.71 MB
Power MOS FET APPLICATION NOTE 日本語 应用文档 PDF 814 KB
PCN / PDN
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 产品变更通告 PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 产品变更通告 PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 产品变更通告 PDF 1.46 MB
其他
Product Scout Automotive 手册 PDF 3.25 MB
PowerMOSFET & IPD 手册 PDF 2.24 MB
瑞萨 分立器件 综合产品目录 晶体管/二极管/双向晶闸管/晶闸管 手册 PDF 11.56 MB
Renesas Semiconductor Lead-Free Packages 手册 PDF 1.32 MB