HS-4423EH

Radiation Hardened Dual, Inverting Power MOSFET Driver

Product Status: 量産中

OVERVIEW

The Radiation Hardened HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH are inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V.

The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high frequency applications.

The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance. The output stage incorporates a low voltage lock-out circuit that puts the outputs into a three-state mode when the supply voltage drops below 10V for the HS-4423RH, HS-4423EH and 7.5V for the HS-4423BRH and HS-4423BEH.

Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.

KEY FEATURES

  • Electrically screened to DLA SMD # 5962-99511
  • QML qualified per MIL-PRF-38535 requirements
  • EH version acceptance tested to 50krad(Si) (LDR)
  • Radiation environment
  • High dose rate (50-300rad(Si)/s): 300krad(Si)
  • Latch-up immune
  • Low dose rate immune
  • IPEAK: >2A (typ)
  • Matched rise and fall times (CL = 4300pF):75ns (max)
  • Low voltage lock-out feature
  • HS-4423RH, HS-4423EH: <10.0V
  • HS-4423BRH, HS-4423BEH: <7.5V
  • Wide supply voltage range: 12V to 18V
  • Prop delay: 250ns (max)
  • Consistent delay times with VCC changes
  • Low power consumption
  • 40mW with inputs high
  • 20mW with inputs low
  • Low equivalent input capacitance: 3.2pF (typ)
  • ESD protected: 4000V

PARAMETRICS

Parameters
HS-4423EH
Basic Information
Production Status
量産中
クラス
V
DLA SMD
5962-99511
高線量率 (HDR) krad (Si)
300
低線量率 (ELDRS) krad (Si)
50
SEL (MeV/mg/cm2)
SEL free
SMD URL
認定レベル
QML Class V (space)
温度範囲
-55 to +125

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