ISL6613B

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

Product Status: 量産中

OVERVIEW

The ISL6612B and ISL6613B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors.

The ISL6612B drives the upper gate to above rising VCC POR (7V), while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613B drives both upper and lower gates over a range of 5V to 12V. This drivevoltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. These drivers are optimized for POL DC/DC Converters for IBA Systems.

An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up.

These drivers also feature a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

KEY FEATURES

  • Pin-to-pin Compatible with HIP6601 SOIC family
  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Low VCC Rising Threshold (7V) for IBA Applications.
  • Advanced Adaptive Zero Shoot-Through Protection
  • Body Diode Detection
  • Auto-zero of rDS(ON) Conduction Offset Effect
  • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 2MHz)
  • 3A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • Three-State PWM Input for Output Stage Shutdown
  • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat No-Lead (DFN) Package
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)

PARAMETRICS

Parameters
ISL6613B
Basic Information
Production Status
量産中
VIN/VPWM (V) (max)
GND - 0.3V to 7V
VDRIVE (V)
5 to 12
ドライバ当たり出力UGATEソース|シンク (A)
1.25|2
ドライバ当たり出力LGATEソース|シンク (A)
2|3
相電圧 (V) (min)
GND - 0.3VDC GND - 8V (<400ns)
相電圧 (V) (max)
15VDC, 30V (<200ns)
無負荷IS (mA) (max)
4.5
IS
4.5 mA
認定レベル
Standard
温度範囲
0 to +70

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