概要

Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..

特長

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • High density mounting
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 Compliant

ドキュメント

タイトル 分類 日付
PDF254 KBEnglish
データシート
PDF2.65 MBEnglish
アプリケーションノート
PDF4.38 MB
カタログ
PDF2.24 MB
カタログ
PDF1.32 MB
カタログ
PDF4.87 MBEnglish
製品変更通知
PDF3.82 MBEnglish
製品変更通知
PDF1.91 MBEnglish
製品変更通知

設計・開発

モデル