100V – 250A – N-channel Power MOS FET
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概要
Description
The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching
applications.
特長
- Super low on-state resistance
- RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 9500pF TYP. (VDS = 50 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
アプリケーション
設計・開発
モデル
ECADモデル
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製品選択
Processing table
| MP-25ZU | TO-263-7 / D2PAK-7 | Embossed Tape | サンプルを入手, |
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