概要
説明
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
特長
- Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
- Low input capacitance Ciss = 5000 pF TYP.
ドキュメント
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日付 | |
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| PDF 1.29 MB | データシート | |
| PDF 2.65 MB 英語 | アプリケーションノート | |
| PDF 1.71 MB | ガイド | |
| PDF 224 KB | 製品別信頼性資料 | |
| PDF 2.24 MB | カタログ | |
| PDF 596 KB | ガイド | |
6 items
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設計・開発
モデル
ECADモデル
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Processing table
| MP-25ZK | TO-263 / D2PAK | Embossed Tape | サンプルを入手, | |
| MP-25ZK | TO-263 / D2PAK | Embossed Tape |
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