概要
説明
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
特長
- Low on-state resistance RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
- Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
ドキュメント
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日付 | |
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| PDF 230 KB | データシート | |
| PDF 2.65 MB 英語 | アプリケーションノート | |
| PDF 1.71 MB | ガイド | |
| PDF 222 KB | 製品別信頼性資料 | |
| PDF 2.24 MB | カタログ | |
| PDF 596 KB | ガイド | |
6 items
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設計・開発
モデル
ECADモデル
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Processing table
| HSON | Power SON-8 5x6 | Embossed Tape | サンプルを入手, | |
| HSON | Power SON-8 5x6 | Embossed Tape |
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