The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit with embedded ECC. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.

特性

  • Single 3.0 V supply: 2.7 V to 3.6 V
  • Fast access time: 45/55 ns (max)
  • Power dissipation: Active: 9 mW/MHz (typ) Standby: 1.5 μW (typ)
  • Completely static memory. No clock or timing strobe required
  • Equal access and cycle times
  • Common data input and output. Three state output
  • Battery backup operation. 2 chip selection for battery backup
  • Temperature range: -40 to +85°C
  • Embedded ECC (error checking and correction) for single-bit error correction

description文档

文档标题 language 类型 文档格式 文件大小 日期
数据手册与勘误表
star R1LV1616HBG-I Datasheet 日本語 数据手册 PDF 354 KB
使用指南与说明
SRAM Part Number Guide 日本語 指南 PDF 199 KB
Technical Updates
Notice about the switch to lead-free parts on SRAMs 日本語 Technical Update PDF 113 KB
PCN / PDN
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 产品变更通告 PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001B/E ) 日本語 产品变更通告 PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package ( PC-WRP-A001A/E ) 日本語 产品变更通告 PDF 1.46 MB
其他
Standard SRAM Products Outline 日本語 概览 PDF 1.44 MB
Low Power SRAMs Brochure 手册 PDF 2.26 MB
Analog ICs Brochure 日本語 手册 PDF 4.20 MB
模拟&功率器件型号速查手册 手册 PDF 3.28 MB
Package Drawing TFBGA 48pin PTBG0048HF-A Package Outline Drawing PDF 20 KB
Renesas Semiconductor Lead-Free Packages 手册 PDF 1.32 MB

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文档标题 language 类型 文档格式 文件大小 日期
模型
IBIS models (Low Power SRAM) HM62V16100LBPI R1LV1616HBG Model - Other IBS 43 KB