Overview

Description

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance
    RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A)
    RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
  • Low Ciss: Ciss = 5450 pF TYP.
  • Comparison

    Applications

    Documentation

    Type Title Date
    Brochure PDF 8.73 MB
    End Of Life Notice PDF 79 KB 日本語
    Application Note PDF 3.23 MB 日本語
    Application Note PDF 648 KB 日本語
    Datasheet PDF 245 KB
    5 items

    Design & Development

    Models