Overview

Description

The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor, and darlington transistor output enables low-current input. The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for surface mount.

Features

  • High collector to emitter voltage (VCEO = 350 V)
  • High isolation voltage (BV = 5 000 Vr.m.s.)
  • High current transfer ratio (CTR = 1 500 % TYP.)
  • Ordering number of taping product: PS2535L-1-F3: 2 000 pcs/reel
  • Safety standards UL approved: No. E72422 BSI approved: No. 8221/8222 DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 290 KB
Brochure PDF 2.04 MB 日本語
Brochure PDF 5.20 MB 日本語
Product Reliability Report PDF 190 KB
Brochure PDF 5.14 MB 日本語
Application Note PDF 466 KB 日本語
Application Note PDF 957 KB
7 items

Design & Development

Models