Overview

Description

The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance
  • Gate to Source ESD protection diode built-in

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.38 MB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 224 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models