Overview

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

Documentation

Title Type Date
PDF476 KB
Datasheet
PDF3.27 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF2.00 MB
Guide

Design & Development

Support