Overview

Description

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.

Features

  • High Gain-Bandwidth Product (fT) 10GHz
  • High Power Gain-Bandwidth Product 5GHz
  • High Current Gain (hFE) 70
  • Noise Figure (Transistor) 3.5dB
  • Low Collector Leakage Current <0.01nA
  • Excellent hFE and VBE Matching
  • Pin-to-Pin to UPA102G
  • Pb-Free Plus Anneal Available (RoHS Compliant)

Comparison

Applications

Applications

  • Single Balanced Mixers
  • Wide Band Amplification Stages
  • Differential Amplifiers
  • Multipliers
  • Automatic Gain Control Circuits
  • Frequency Doublers, Tripplers
  • Oscillators
  • Constant Current Sources
  • Wireless Communication Systems
  • Radio and Satellite Communications
  • Fiber Optic Signal Processing
  • High Performance Instrumentation

Documentation

Design & Development

Models