The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL71040M has a 4. 5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14. 7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths. The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.

特性

  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level) Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
  • NiPdAu-Ag Lead finish (Sn-free, Pb-free)
  • Moisture Sensitivity Level (MSL) Rating: 1
  • Passes NASA Low Outgassing Specifications
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Characterized radiation levels
    • Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
    • No SEB/L, VDD = 16.5V : 43MeV•cm2/mg

tune产品选择

器件号 Part Status Pkg. Type Carrier Type MOQ Buy Sample
Active TDFN Tube 1
Availability
Active TDFN Reel 6000
Availability
Active TDFN Reel 250
Availability

description文档

文档标题 language 类型 文档格式 文件大小 日期
数据手册与勘误表
star ISL71040M Datasheet 数据手册 PDF 681 KB
应用指南 & 白皮书
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 白皮书 PDF 470 KB
AN9867: End of Life Derating: A Necessity or Overkill 应用文档 PDF 338 KB
其他
Intersil Space Products Brochure 手册 PDF 3.14 MB
ISL70040SEH Neutron Test Report 报告 PDF 316 KB

file_download下载

文档标题 language 类型 文档格式 文件大小 日期
模型
ISL70040SEH Steady State iSim Model Model - Other SXSCH 104 KB
ISL70040SEH, ISL73040SEH PSPICE Model Model - SPICE ZIP 13 KB

memory开发板与套件

器件号 文档标题 类型 Company
ISL71040MEV1Z Radiation Tolerant Low-Side GaN FET Driver Evaluation Board 评估 Renesas
ISL71043MEVAL1Z Radiation Tolerant Single-Ended Current Mode PWM Controller Evaluation Board 评估 Renesas

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