概览

简介

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

特性

  • Low on-state resistance RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
  • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 156 KB
指南 PDF 1.71 MB
手册 PDF 2.24 MB
3 items

设计和开发

模型