概要

説明

The F2913 is a high isolation, low insertion loss, 50Ω SPDT (SP2T) absorptive RF switch designed for a multitude of wireless and RF applications. This device covers a broad frequency range of 50MHz to 6000MHz. In addition to providing low insertion loss, the F2913 also delivers high linearity and high isolation performance while providing a 50Ω termination at all RF ports. The F2913 uses a single positive supply voltage of +2.7V to +5.5V and supports three states using either +1.8V or +3.3V control logic.

特長

  • Low insertion loss: 0.79dB at 2GHz
  • High isolation:
  • 71dB at 1GHz
  • 65dB at 2GHz
  • 58dB at 4GHz
  • High IIP3: +65dBm at 2.6GHz
  • Supply voltage: +2.7V to +5.5V
  • 1.8V and 3.3V compatible control logic
  • Operating temperature: -40°C to +110°C
  • 4 × 4mm 20-QFN package

製品比較

アプリケーション

ドキュメント

分類 タイトル 日付
データシート PDF 997 KB
ガイド PDF 2.24 MB
製品概要 PDF 438 KB
製品変更通知 PDF 5.71 MB
製品変更通知 PDF 5.61 MB
製品変更通知 PDF 255 KB
Application Brief PDF 686 KB
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設計・開発

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モデル

IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.