ISL71040M

Radiation Tolerant Low-Side GaN FET Driver

Product Status: Mass Production

OVERVIEW

The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device.

The ISL71040M has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage features an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold.

The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage, which allows the inputs to be connected directly to most PWM controllers. The ISL71040M’s split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on and turn-off paths.

The ISL71040M operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld Thin Dual Flat No-Lead (TDFN) plastic package.

KEY FEATURES

  • Wide operating voltage range of 4.5V to 13.2V
  • Up to 14.7V logic inputs (regardless of VDD level)
    • Inverting and non-inverting inputs
  • Optimized to drive enhancement mode GaN FETs
    • Internal 4.5V regulated gate drive voltage
    • Independent outputs for adjustable turn-on/turn-off speeds
  • NiPdAu-Ag Lead finish (Sn-free, Pb-free)
  • Moisture Sensitivity Level (MSL) Rating: 1
  • Passes NASA Low Outgassing Specifications
  • Full military temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
  • Characterized radiation levels
    • Low Dose Rate (LDR) <0.01rad(Si)/s : 30krad(Si)
    • No SEB/L, VDD = 16.5V : 43MeV•cm2/mg

BLOCK DIAGRAM

 Block Diagram

PARAMETRICS

Parameters
ISL71040M
Basic Information
Part Name
ISL71040M
Production Status
Mass Production
Input Voltage Min (V)
4.5
Input Voltage Max (V)
13.2
Gate Drive (V)
4.5
UVLO Rising (V)
3.98
UVLO Falling (V)
3.74
VIH
1.7
VIL
1.4
RONP (Ohms)
2.2
RONN (Ohms)
0.5
Low Dose Rate (ELDRS) krad (Si)
30
SEL (MeV/mg/cm2)
43

Design Resources

Taking Advantage of GaN in Small Satellite New Space Applications

Taking Advantage of GaN in Small Satellite “New Space” Applications

Learn how Renesas GaN FETs allow for more efficient switching, higher frequency operation, reduced gate drive voltage, and smaller solution sizes in satellite applications.

Knowledge Base

Rad Tolerant Power FAQs

Find answers to common questions, support articles and development hints.


FAQs

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Evaluation Tools

ISL71040MEV1Z Radiation Tolerant Low-Side GaN FET Driver Eval Board

Evaluation Kit

ISL71040MEV1Z

The ISL71040MEV1Z evaluation platform is designed to evaluate the ISL71040M radiation tolerant low-side GaN FET driver.

ISL71043MEVAL1Z Radiation Tolerant Single-Ended Current Mode PWM Controller Eval Board

Evaluation Kit

ISL71043MEVAL1Z

The ISL71043MEVAL1Z eval board is used to evaluate the ISL71043M PWM controller and ISL71040M GaN FET driver in a flyback power supply configuration.

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