In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation low-side GaN FET driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation tolerant GaN FET drivers are used for DC/DC power supplies in small satellites (smallsats) and launch vehicles.