In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation low-side GaN FET driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation tolerant GaN FET drivers are used for DC/DC power supplies in small satellites (smallsats) and launch vehicles.

descriptionDocumentation

Title language Type Format File Size Date Sort descending
Application Notes & White Papers
Taking Advantage of GaN in Small Satellite “New Space” Applications 日本語 White Paper PDF 470 KB
Powering Small Satellite Constellations with Plastic ICs White Paper PDF 405 KB
AN9867: End of Life Derating: A Necessity or Overkill Application Note PDF 338 KB
Other
Intersil Space Products Brochure Brochure PDF 3.12 MB

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