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Rad Tolerant GaN FET Drivers
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In recent years, the space market has been driving towards more efficient power management solutions. Part of the drive includes the use of Gallium Nitride (GaN) FETs as power stages. GaN FETs have higher power conversion efficiency and have more natural immunity to radiation, due to them being wide-bandgap semiconductors. Renesas has developed a radiation low-side GaN FET driver to efficiently drive the GaN FETs used in these power systems. These plastic-packaged, radiation tolerant GaN FET drivers are used for DC/DC power supplies in small satellites (smallsats) and launch vehicles.
Product Selection Table
Processing table
| Radiation Tolerant Low-Side GaN FET Driver | 4.5 | 13.2 | 4.5 | 3.98 | 3.74 | 1.7 | 1.4 | 2.2 | 0.5 | 30 | 43 | 8 | TDFN |
| Radiation Tolerant 12V Half-Bridge GaN FET Driver | 4.75 | 13.2 | 5.5 | 4.6 | 4.55 | 1.8 | 1.5 | 50 | 43 | 20 | QFN |
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Documentation
| Type | Date | |
|---|---|---|
| PDF 4.85 MB | Brochure | |
| PDF 470 KB 日本語 | White Paper | |
| PDF 405 KB | White Paper | |
| PDF 338 KB | Application Note | |
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play_circle_filledVideos & Training
Radiation-Tolerant Plastic-Package ICs Overview
Learn about Intersil's family of radiation-tolerant plastic-package ICs designed to support the emerging field of small satellites that will provide solutions such as high-speed Internet connections to hundreds of millions of users in communities, governments, and businesses worldwide. These ICs deliver rad-tolerance performance at a much lower cost point versus radiation assurance tested Class V (space level) products.
Video List
