IS-1845ASEH

Single Event Radiation Hardened High Speed, Current Mode PWM

Product Status: Mass Production

OVERVIEW

The IS-1845ASRH, IS-1845ASEH are designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier.

Constructed with Renesas Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate.

Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.

KEY FEATURES

  • Electrically Screened to DSCC SMD # 5962-01509
  • QML Qualified per MIL-PRF-38535 Requirements
  • Radiation Environment
    • High Dose Rate: 300krad(SI) (Max)
    • Low Dose Rate: 50krad(SI) (Max)
    • SEL Immune: Dielectrically Isolated
    • SEU Immune: 35MeV/mg/cm2
    • SEU Cross-Section at 89MeV/mg/cm2: 5x10-6cm2
  • Low Start-up Current: 100µA (Typ)
  • Fast Propagation Delay: 80ns (Typ)
  • Supply Voltage Range: 12V to 20V
  • High Output Drive: 1A (Peak, Typ)
  • Undervoltage Lockout: 8.8V Start (Typ), 8.2V Stop (Typ)
  •  

     

    APPLICATIONS

  • Current-Mode Switching Power Supplies
  • Control of High Current FET Drivers
  • Motor Speed and Direction Control

BLOCK DIAGRAM

 Block Diagram

PARAMETRICS

Parameters
IS-1845ASEH
Basic Information
Production Status
Mass Production
Class
V, Q, /PROTO
DLA SMD
5962-01509
High Dose Rate (HDR) krad (Si)
300
Low Dose Rate (ELDRS) krad (Si)
50
SEL (MeV/mg/cm2)
SEL free
SMD URL
Qualification Level
QML Class V (space)
Temperature Range
-55 to +125

Action Needed