ISL73040SEHEV4Z Evaluation Board

Radiation Hardened Low-Side GaN FET Driver and GaN FET

The ISL73040SEHEV4Z evaluation board demonstrates how to build a half bridge power stage with the ISL73040SEH low side GaN driver and the ISL73024SEH 200V GaN FET. The ISL73040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of the ISL73024SEH GaN FET. The ISL73024SEH is a 200V GaN FET capable of 7.5A drain current.

Key Features

  • Single PWM input to drive a half bridge configuration
  • Adjustable dead time control
  • Wide openings to support various inductor footprints
  • >95% peak efficiency with high switching frequencies
  • Enable/disable functions

Applications

  • Flyback and forward converters
  • Boost and PFC converters
  • Secondary synchronous FET drivers

Related Product

ISL73040SEH
ISL73024SEH

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Tool Information

Tools Orderable Part Number (s) Production Status Manufacturer Suggested Single Tool Price
SPQ
Description Distributor Stock Distributors Distributor Purchase
ISL73040SEHEV4Z Mass Production Renesas call 1 0 Call
ISL70040SEHEV4Z EOL call 1 0 Call

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Disclaimer: THIS MATERIAL IS PROVIDED “AS-IS” FOR EVALUATION PURPOSES ONLY. RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (collectively, “Renesas”) DISCLAIM ALL WARRANTIES, INCLUDING WITHOUT LIMITATION, FITNESS FOR A PARTICULAR PURPOSE AND MERCHANTABILITY. Renesas provides evaluation platforms and design proposals to help our customers to develop products. However, factors beyond Renesas' control, including without limitation, component variations, temperature changes and PCB layout, could significantly affect the product performance. It is the user’s responsibility to verify the actual circuit performance.