The ISL71040MEV1Z evaluation platform is designed to evaluate the ISL71040M. The ISL71040M is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. It operates across a supply range of 4.5V to 13.2V and offers both non-inverting and inverting inputs to satisfy non-inverting and inverting gates drive within a single device. The ISL71040M has a 4.5V gate drive voltage (VDRV) that is generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-to-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN and INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL71040M inputs can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the ISL71040M inputs to be connected directly to most PWM controllers. The split outputs of the ISL71040M offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths.
- Wide VDD range single
- 4.5V to 13.2V
- Location provided for load resistors to switch the GaN FET with a load
- SMA connector on the gate drive voltage to analyze the gate waveforms
- Drain/Source sense test points to analyze the drain to source waveforms
- Banana jack connectors for power supplies and drain/source connections
- Flyback and forward converters
- Boost and PFC converters
- Secondary synchronous FET drivers
Taking Advantage of GaN in Small Satellite “New Space” Applications
Learn how Renesas GaN FETs allow for more efficient switching, higher frequency operation, reduced gate drive voltage, and smaller solution sizes in satellite applications.
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