Power & Power Management

Overview

  • Trench gate and thin wafer technology (G8H series)
  • Built in fast recovery diode in one package
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
  • Quality grade: Standard
  • High-Speed switching
  • Short circuit withstands time (10 µs min.)
  • Applications: UPS, Welding, photovoltaic inverters, Power converter system

Documentation

Title Type Date
PDF302 KB
Datasheet
PDF648 KB日本語
Application Note
PDF506 KB日本語
Application Note
PDF941 KB日本語
Application Note
PDF1.05 MB日本語
Application Note
PDF2.72 MB日本語
Brochure
PDF1.92 MB
Brochure
PDF1.32 MB
Brochure

Design & Development

Support