Product Status: Mass Production
OVERVIEW
The ISL6625A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology.
In ISL6625A, the upper and lower gates are both driven to an externally applied voltage. This provides the capability to optimize applications involving trade-offs between gate charge and conduction losses.
An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6625A has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt.
This driver also has an overvoltage protection feature, which is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) via a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.
In ISL6625A, the upper and lower gates are both driven to an externally applied voltage. This provides the capability to optimize applications involving trade-offs between gate charge and conduction losses.
An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6625A has a 10kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt.
This driver also has an overvoltage protection feature, which is operational while VCC is below the POR threshold. The PHASE node is connected to the gate of the low-side MOSFET (LGATE) via a 30kΩ resistor, limiting the output voltage of the converter close to the gate threshold of the low-side MOSFET. This is dependent on the current being shunted, which provides some protection to the load should the upper MOSFET(s) become shorted.
KEY FEATURES
- Dual MOSFET drives for synchronous rectified bridge
- Advanced adaptive zero shoot-through protection
- PHASE detection
- LGATE detection
- Auto-Zero of rDS(ON) conduction offset effect
- Low standby bias current
- 36V internal bootstrap switcher
- Bootstrap capacitor overcharging prevention
- Integrated high-side gate-to-source resistor to prevent from self turn-on due to high input bus dV/dt
- Pre-POR overvoltage protection for start-up and shutdown
- Power rails undervoltage protection
- Expandable bottom copper pad for enhanced heat sinking
- Dual flat no-lead (DFN) package
- Near chip-scale package footprint; improves PCB efficiency and thinner in profile
- Pb-Free (RoHS compliant)
BLOCK DIAGRAM
PARAMETRICS
Parameters
ISL6625A
Basic Information
Production Status
Mass Production
VIN/VPWM (max) (V)
15
VDRIVE (V)
5 to 12
Output Per Driver UGATE Source|Sink (A)
1.25|2
Output Per Driver LGATE Source|Sink (A)
1.75|3
Phase Voltage Min (V)
GND - 0.3VDC GND - 8V (<400ns)
Phase Voltage Max (V)
25VDC, 30V (<200ns)
No Load IS (max) (mA)
N/A
IS
7.56 mA
Qualification Level
Standard
Temperature Range
-40 to +85