OVERVIEW
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
KEY FEATURES
- Low on-state resistance
RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A) - Low input capacitance
Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) - High current
ID(DC) = ±100 A - RoHS Compliant
PARAMETRICS
Parameters
N0601N
Basic Information
Production Status
Mass Production
PLP
-
Package Type
TO-263
Nch/Pch
Nch
Number of Channels
Single
VDSS (V) max.
60
ID (A)
100
RDS (ON) (mohm) max. @10V or 8V
4.2
Ciss (pF) typ.
7730
Vgs (off) (V) max.
4
VGSS (V)
20
Pch (W)
156
Application
Industrial, Consumer Use
Mounting Type
Surface Mount
Series Name
N0 Series
QG (nC) typ.
133
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