HAF2017S

Silicon N Channel Power MOS FET Power Switching

Product Status: Product Inquiry

OVERVIEW

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

KEY FEATURES

    • Logic level operation (4 to 6 V Gate drive)
    • High endurance capability against to the short circuit
    • Built-in the over temperature shutdown circuit
    • Latch type shutdown operation (Need 0 voltage recovery)

PARAMETRICS

Parameters
HAF2017S
Basic Information
Nch/Pch
Nch
Number of channels
Single
VDSS (V)
60
ID (A)
20
RDS (ON) (mohm) max. @4V to 4.5V
53
RDS (ON) (ohm) typ. @4V to 4.5V
35
RDS (ON) (mohm) max. @8V to 10V
43
RDS (ON) (ohm) typ. @8V to 10V
27
Pch (W) .
50
Tsd (°C) typ.
175
Package Type.
LDPAK(S)(1)
Production Status
Product Inquiry

Outline

Dimensions

Below you will find information to support the development of your application.
You can find an explanation of orderable part numbers here.

 

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