Overview

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.  This FET has the built-in over temperature shut-down circuit in the gate area.  And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Features

  • Logic level operation (–6 V Gate drive).
  • Built-in the over temperature shut-down circuit
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • AEC-Q101 Rev-E Compliant

Comparison

Applications

Documentation

Design & Development

Models