Overview

Description

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 659 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Brochure PDF 2.24 MB
4 items

Design & Development

Boards & Kits

Boards & Kits

Models