Overview

Description

The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A)
  • Logic level drive type
  • Gate to Source ESD protection diode built in
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 350 KB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 223 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models