Overview

Description

The NP60N04VLK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 3.9 mΩ MAX. (VGS = 10 V, ID = 30 A)
  • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

Documentation

Document title Document type Type Date Date
PDF 571 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 226 KB Product Reliability Report
5 items

Design & Development

Models

Support