Overview

Description

The NP15P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 70 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 95 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
  • Low input capacitance Ciss = 1100 pF TYP.
  • Built-in gate protection diode

Documentation

Document title Document type Type Date Date
PDF 931 KB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
PDF 224 KB Product Reliability Report
5 items

Design & Development

Models

Models

Title Type Type Date Date
ZIP Model - SPICE
1 item

Support