Overview

Description

The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
  • High current rating: ID(DC) = ∓100 A

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.32 MB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 224 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models