The New RF Voltage Variable Attenuators Extend IDT’s Frequency Range Coverage with Low-Insertion Loss, High Linearity Devices Supporting 1 MHz to 6 GHz
11 Aug 2015
SAN JOSE, Calif., Aug. 11, 2015-- Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI) today introduced two new members to its growing family of RF voltage variable attenuators (VVA), expanding IDT’s frequency coverage to a range of 1 MHz to 6 GHz. Like the other members of the family, the F2255 and F2258 devices offer industry-leading low insertion loss and high linearity.
IDT’s VVAs deliver analog control for applications that require precise attenuation. Both new devices come in a compact 3 millimeter by 3 millimeter, 16-pin TQFN package. They offer about half the insertion loss of competitive solutions, IP3 performance 1000x (30 dB) better than the competing Gallium arsenide (GaAs) device, and they exhibit a linear-in-dB attenuation characteristic across the voltage control range. Their low insertion loss reduces RF chain path loss, while their high linearity improves system data rates.
These newest devices match popular footprints and are ideal for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios, and HF, VHF and UHF radios.
“IDT’s silicon-based RF products deliver exceptional performance compared to GaAs solutions, in this case up to a 30dB linearity improvement,” said Chris Stephens, general manager of IDT’s RF division. “These devices are the lowest insertion loss VVAs on the market, and have the most linear attenuation control characteristic.”
By using silicon-based RF semiconductor technology, IDT’s attenuators offer a robust alternative to older GaAs-based semiconductor technology. Silicon technology offers the advantages of improved RF performance as well as more robust electrostatic discharge (ESD) protections, better moisture sensitivity levels (MSL), improved thermal performance, lower current consumption, and the proven reliability of silicon technology.
Comparing the F2258 to its pin-compatible GaAs competitor, the device has an Input IP3 of up to 65dBm vs 35dBm, a maximum attenuation slope of 33dB/Volt vs. 53dB/Volt; minimum return loss up to 6000MHz, 12.5dB vs. 7dB; and operating maximum temperature range of 105C Vs 85C. The F2255 device supports a frequency range down to 1MHz and has a maximum attenuation slope of 33dB/Volt. Both devices have bi-directional RF ports, support a single positive supply voltage of either 3V or 5V and have an operating temperature range of -40 to 105C.
IDT offers high-performance and full-featured radio frequency (RF) mixer and gain control products that deliver exceptional performance in compact packages. The RF signal path products include low-power, low-distortion RF to intermediate frequency (IF) mixers, low-noise high-performance intermediate frequency (IF) variable gain amplifiers (VGA), low-noise high-performance digital step attenuators (DSA), and high-performance low-insertion loss RF switches. These devices are ideal for products such as cellular 4G base stations, broadband repeaters, distributed antenna systems and microwave backhaul equipment.
IDT and the IDT logo are trademarks or registered trademarks of Integrated Device Technology, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
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