Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TOLT |
| Pkg. Code: | |
| Lead Count (#): | 16 |
| Pkg. Dimensions (mm): | 10 x 15 |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | TOLT |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 638 |
| Coss (Typical) (pF) | 72 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 29 |
| Lead Count (#) | 16 |
| Pkg. Dimensions (mm) | 10 x 15 |
| Qg typ (nC) | 9 |
| Qoss (nC) | 80 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 72 |
| RDSON (max) (mΩ) | 85 |
| Ron * Qoss (FOM) | 5760 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 80 |
Resources for TP65H070G4RS
Description
The TP65H070G4RS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4RS is offered in an industry-standard TOLT with a Kelvin source and common source package configuration.