Package Information
| CAD Model: | View CAD Model |
| Pkg. Type: | TO-247 |
| Pkg. Code: | |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
Environmental & Export Classifications
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| Pb (Lead) Free |
Product Attributes
| Pkg. Type | TO-247 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Through Hole |
| Temp. Range (°C) | -55 to +150°C |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 1000 |
| Coss (Typical) (pF) | 110 |
| FET Type | N-Channel |
| Id max @ 25°C (A) | 34 |
| Lead Count (#) | 3 |
| Price (USD) | $5.02512 |
| Qg typ (nC) | 16 |
| Qoss (nC) | 120 |
| Qrr typ (nC) | 120 |
| Qualification Level | Standard |
| RDSON (Typ) (mΩ) | 50 |
| RDSON (max) (mΩ) | 60 |
| Ron * Qoss (FOM) | 6000 |
| V(TR)DSS max (V) | 800 |
| Vds min (V) | 650 |
| Vth typ (V) | 4 |
| trr (Typical) (nS) | 50 |
Resources for TP65H050G4WS
Description
The TP65H050G4WS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.
