Overview

Description

Support is limited to customers who have already adopted these products.

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
  • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 271 KB
Guide PDF 2.65 MB
Product Reliability Report PDF 220 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models