Overview

The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications.

  • Super low on-state resistance RDS(on) = 3.95 mΩ MAX. (VGS = 10 V, ID = 30 A)
  • Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP60N04PDK40 V - 60 A - N-channel Power MOS FETApplication: Automotive
PDF 272 KB
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Product Reliability Report
NP-Series ANL2Nch-MP25 Reliability Report for AEC-Q101
PDF 226 KB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
5 items