Overview

Description

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The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 6.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
  • Channel temperature 175 degree rated

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 316 KB
Guide PDF 2.65 MB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
4 items

Design & Development

Models