Overview

Description

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The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rated
  • Low on-state resistance RDS(on) = 5.0 mΩ MAX. (VGS = 10 V, ID = 28 A)
  • Low input capacitance Ciss = 3500 pF TYP. (VDS = 25 V)

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 315 KB
Guide PDF 2.65 MB
Product Reliability Report PDF 223 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models