Overview

Description

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The NP110N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating
  • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
  • Low Ciss: Ciss = 17100 pF TYP.

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 265 KB
Guide PDF 2.65 MB
Product Reliability Report PDF 227 KB
Application Note PDF 648 KB 日本語
Brochure PDF 2.24 MB
5 items

Design & Development

Models