Overview

The NP100N055MDH, NP100N055NDH, NP100N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

  • Enhancing Tch(MAX.) to 200°C (Operation time until 250 Hr)
  • Super low on-state resistance NP100N055MDH, NP100N055NDH RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.6 mΩ MAX. (VGS = 4.5 V, ID = 50 A) NP100N055PDH RDS(on)1 = 4.4 mΩ MAX. (VGS = 10 V, ID = 50 A) RDS(on)2 = 6.2 mΩ MAX. (VGS = 4.5 V, ID = 50 A)
  • High avalanche energy, High avalanche current
  • Logic level drive Type
  • Low input capacitance Ciss = 9500 pF TYP. (VDS = 25 V)

Documentation

= Featured Documentation
Type Title Date
Datasheet
NP100N055MDH, NP100N055NDH, NP100N055PDH Datasheet
PDF 357 KB
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
4 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

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    NP100N055MDH
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