Overview

The 2SK3069 is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Low on-resistance
    RDS(on) = 6 mΩ typ.
  • Low drive current
  • 4 V gate drive device can be driven from 5 V source

    • Documentation
    Type Title Date
    Application Note
    Attention of Handling Semiconductor Devices
    PDF 648 KB 日本語
    Technical Update
    PCN of Marking for Power Transistors
    PDF 92 KB 日本語
    Datasheet
    2SK3069 Datasheet
    PDF 101 KB 日本語
    3 items