Overview

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The 2SJ626 is a switching device which can be driven directly by a 4. 0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

  • 4.0 V drive available
  • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)

Documentation

= Featured Documentation
Type Title Date
Datasheet
2SJ626 Data Sheet (D15962EJ1V0DS00)
PDF 195 KB 日本語
Guide
Power Discretes Part Number Guide
PDF 2.65 MB
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
4 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Explore ECAD Models
Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    2SJ626(0)-T1B-A
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    memory
    view_in_ar
    		TMM Embossed Tape
    2SJ626-T1B-A
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    memory
    view_in_ar
    		TMM Embossed Tape
    2SJ626-T1B-AT
    circleObsolete
    memory
    view_in_ar
    		TMM Embossed Tape
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