Overview
Description
The RJP1CS23DWA 1250V, 30A, trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.
Features
- Renesas generation 7th Trench IGBT
- Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 30A, VGE = 15V, Tc = 25 °C)
- Moderate speed switching
- Short circuit withstands time (10μs min.)
Comparison
Applications
Applications
- Inverters
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| Wafer |
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