Skip to main content
Order Now

Overview

Description

Renesas' RJH60D2DPP-A0 600V, 12A insulated-gate bipolar transistor (IGBT) features trench gate and thin wafer technology, built-in fast recovery diode (100ns typ.) in one package, and low collector to emitter saturation voltage. The device can be used for power switching applications.

Features

  • Trench gate and thin wafer technology
  • Built-in fast recovery diode (100ns typ.) in one package
  • Low collector to emitter saturation voltage
    VCE(sat) = 1.7V typ. (at IC = 12 A, VGE = 15V, Tc = 25 °C)
  • High-speed switching
    tf = 80 ns typ. (at Vcc = 300V, VGE = 15V, Ic = 12A, Rg = 5Ω, inductive load)
  • Short circuit withstands time (5µs typ.)
  • Applications: Inverter
  • Quality grade: Standard

Comparison

Applications

  • Power switching
  • Inverter

Documentation

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models