Overview

Renesas' RJH60D1DPP-A0 600V, 10A insulated-gate bipolar transistors (IGBT) featuring trench gate and thin wafer technology, built-in fast recovery diode (100ns typ.) in one package, and low collector to emitter saturation voltage can be used for power switching applications. 

  • Trench gate and thin wafer technology
  • Built-in fast recovery diode (100ns typ.) in one package
  • Low collector to emitter saturation voltage
    VCE(sat) = 1.9V typ. (at IC = 10A, VGE = 15V, Tc = 25 °C)
  • High-Speed switching
    tf = 75ns typ. (at Vcc = 300V, VGE = 15V, Ic = 10A, Rg = 5Ω, inductive load)
  • Short circuit withstands time (5µs typ.)
  • Applications: Inverter
  • Quality grade: Standard

Applications

  • Power switching
  • Inverter

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

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Diagram of ECAD Models

Product Options

    Processing table
    Pkg. Type
    Carrier Type
    Buy / Sample
    Part Number
    RJH60D1DPP-A0#T2
    circleNRND
    memory
    view_in_ar
    		TO-220FPA Tube
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