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    4. Renesas Electronics Introduces Low-Loss, Ultra Miniature Power MOSFETs for Improved Power Efficiency, Smaller Form Factor in Portable Devices

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Product Specifications of the P-Channel Power MOSFETs

TypeProductDrain-
to-Source
voltage
(VDSS)
(V)
Gate-to-
Source
voltage
(VGSS)
(V)
Drain
current
(ID)(A)
On-resistance
(mΩ)
VGSS=10VVGSS=4.5VVGSS=2.5VVGSS=1.8V
typmaxtypmaxtypmaxtypmax
Pch-
Single
μPA2630-12±8-7.0--222726353556
μPA2631-20±8-6.0--273432434165
Pch-
Dual
μPA2672-12±10-4.0--54676892112179
μPA2670-20±10-3.0--647978105125199
Nch-
Single
μPA260020±12-7.0--9.311.61216--
μPA260130±20-7.010.513.213.618----
Nch-
Dual
μPA266020±124.0--33424362--
Nch-
Pch
μPA269020±124.0--33424362--
-20±10-3.0--647978105125199

The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.

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