*************************************************************************** * Model Generated by Renesas Electronics Corporation * All Rights Reserved * Commercial Use or Resale Restricted *************************************************************************** * NO WARRANTY. * RENESAS AND ITS SUPPLIER DO NOT AND CANNOT WARRANT THE PERFORMANCE * OR RESULTS YOU MAY OBTAIN BY USING THIS SOFTWARE. * AS TO ANY MATTER INCLUDING WITHOUT LIMITATION NONINFRINGEMENT OF THIRD * PARTY RIGHTS, MERCHANTABILITY, INTEGRATION, SATISFACTORY QUALITY, * OR FITNESS FOR ANY PARTICULAR PURPOSE. *************************************************************************** * * Product : RJP65T43DPM * Device Type : IGBT * Model : RSIM-IGBT V201 Level=2 * POWERFIT_IGBT_v301_b01 * Model Format : ltspice * Author : Dec 22,16 Renesas * Node Info. : [10]:Collector, [20]:Gate, [30]:Emitter * *************************************************************************** * * * *================================== .subckt RJP65T43DPM 10 20 30 x1 10 20 30 IGBT_RJP65T43DPM .ends .subckt IGBT_RJP65T43DPM 12 22 32 .param tnom_x=25 chi=1.397E-09 clo=5.186E-12 coff=0 voff=3 noff=0.5 rg 22 23 1.74 cgc 15 23 Q = (-0.5*(chi-clo)*sqrt(voff*voff-2*(V(15)-V(23))*voff+(V(15)-V(23))*(V(15)-V(23))+noff)+(0.5*(chi+clo)+coff)*(V(15)-V(23))) mmain 15 23 32 32 MOSMAIN l=1E-06 w=1 ad=1 rdd 13 15 0.018 tc=0.004 0 deb 12 13 DEB dsd 32 15 DSD * .MODEL MOSMAIN NMOS + LEVEL = 3 + TNOM = 25 + TOX = 1E-07 + NSUB = 1.13E+16 + VTO = 7.1 + UO = 3900 + THETA = 0.005 + VMAX = 4.2E+05 + ETA = 0.0001 + KAPPA = 0.0001 + CGDO = 0 + CGSO = 1.177E-09 + CJ = 4.3E-11 + PB = 0.75 + MJ = 0.38 .MODEL DEB D + TNOM = 25 + IS = 1E-05 + N = 2.9 + IKF = 1 + RS = 0 + TT = 0 + CJO = 1E-06 + VJ = 0.75 + M = 0.5 + EG = 1.11 + XTI = 0.5 + TRS1 = 0 + BV = 30 + IBV = 0.001 + TBV1 = 0 .model DSD D + TNOM = 25 + IS = 1E-27 + IKF = 1E+06 + RS = 0 + TT = 0 + CJO = 0 + VJ = 0.75 + M = 0.5 + EG = 1.11 + XTI = 3 + TRS1 = 0 + BV = 860.8 + IBV = 0.001 + TBV1 = 0.0008498 .ends